Handbook of Silicon Carbide Materials and Devices (Series in Materials Science and Engineering)

Part I: General 1. Silicon Carbide: Presolar SiC Star Dust Grains and the Human History of SiC from 1824 to 1974 2. Recent Progresses in Vapor-liquid-solid Growth of High-Quality SiC Single Crystal Films and Related Techniques 3. Spectroscopic investigations for the dynamical properties of defects in bulk and epitaxially grown 3C-SiC/Si (100) 4. SiC Materials, Devices and Applications: A Review of Developments and Challenges in the 21st Century Part II: SiC Materials Growth and Processing 5. CVD of SiC Epilayers — Basic Principles and Techniques 6. Homo-epitaxy of thick crystalline 4H-SiC structural materials and applications in electric power system 7. Cubic SiC grown on 4H-SiC: Growth and Structural Properties 8. SiC thermal oxidation process and MOS interface characterizations: From carrier transportation to single-photon source Part III: SiC Materials Studies and Characterization 9. Multiple Raman Scattering Spectroscopic Studies of Crystalline Hexagonal SiC Crystals 10. Near-Infrared Luminescent Centers in Silicon Carbide 11. 4H-/6H-SiC single crystal wafers studied by Mueller matrix ellipsometry and transmission ellipsometry 12. Raman Microscopy and Imaging of Semiconductor Films Grown on SiC Hybrid Substrate Fabricated by the Method of Coordinated Substitution of Atoms on Silicon Part IV: SiC Devices and Developments 13. 4H-SiC-Based Photodiodes for Ultraviolet Light Detection 14. SiC radiation detector based on metalinsulator-semiconductor structures 15. Internal Atomic Distortion and Crystalline Characteristics of Epitaxial SiC Thin Films Studied by Short Wavelength and Synchrotron X-ray Diffraction